Research summary
Work focuses on silicon-based tracking detectors and on radiation-induced defects in silicon for high-energy-physics applications. The SLD upgraded vertex detector was a 307 megapixel tracking system based on 96 two-dimensional charge-coupled devices arranged in three concentric cylinders around the SLAC Linear Collider e+e- interaction region; each CCD pixel functioned as an independent particle-detecting element, providing space-point measurements with a typical precision of 4 microns per coordinate and supporting separation of displaced-vertex tracks from prompt tracks for heavy-flavour hadron and tau-lepton studies [1]. A model of generation-recombination in silicon depletion regions after neutron irradiation was developed from deep-level transient spectroscopy on high-resistivity silicon diodes: three defects were correlated with the leakage current, which was 50-600 times greater than expected from standard Shockley-Read-Hall theory; the enhancement was explained by inter-centre charge transfer between defects in close proximity, with a proposed mechanism of rapid direct transfer between a deep donor and a deep acceptor state, and an unidentified defect was observed at E_C - 0.5 eV [2]. A comparative study of radiation damage induced in silicon by 24 GeV/c protons and by reactor neutrons used detectors fabricated on single-crystal silicon enriched with various impurities and found significant differences in electrically active defects across material types; the results indicated that the widely used non-ionizing energy loss (NIEL) factors are insufficient for normalizing electrically active damage in oxygen- and carbon-enriched silicon, and that deliberate impurity introduction can affect radiation hardness [3]. Together the three works link detector design with materials-physics characterization needed to operate trackers in irradiated environments.
Recent publications
- Design and performance of the SLD vertex detector: a 307 Mpixel tracking systemDOI
- First measurement of efficiency and precision of CCD detectors for high energy physicsDOI
- A new model for generation-recombination in silicon depletion regions after neutron irradiationDOI
- Active-edge planar radiation sensorsDOI
- Comparison of radiation damage in silicon induced by proton and neutron irradiationDOI
- A CCD-based vertex detector for SLDDOI
- Measurement of the mass and width of the charmed meson D∗+ (2010)DOI
- Radiation hardness properties of full-3D active edge silicon sensorsDOI
- Dynamic model for the assessment of radiological exposure to marine biotaDOI
- 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL productionDOI
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External profiles
- ORCID: https://orcid.org/0000-0003-2392-1710
- OpenAlex: openalex.org
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